Daria Parshina (born 12 March 1975) is a Russian physicist and materials scientist renowned for her pioneering research on two-dimensional materials and quantum nanostructures. Her work has significantly advanced the understanding of electronic properties in graphene derivatives and transition‑metal dichalcogenides. Parshina has held faculty positions at several leading research institutions, most recently as a professor of condensed‑matter physics at the Moscow Institute of Physics and Technology. She has authored over 120 peer‑reviewed articles, several monographs, and has been awarded numerous international honors for her contributions to the field of nanoelectronics.
Early Life and Education
Family Background
Daria Valeryevna Parshina was born in Moscow into a family of engineers. Her father, Vladimir Parshin, worked as a senior engineer in the Soviet Ministry of Telecommunications, while her mother, Elena Parshina, was a mathematics teacher. Growing up in a household that valued scientific inquiry, Parshina developed an early fascination with the principles of physics and mathematics. She frequently attended local science fairs and was an active participant in the Moscow Regional Physics Olympiad, where she earned a silver medal in 1990.
Secondary Education
Parshina attended the Moscow Secondary School No. 7, known for its rigorous STEM curriculum. During her high school years, she excelled in mathematics and physics, achieving top scores in the Unified State Examination. Her proficiency in scientific problem solving earned her an invitation to the Moscow School of Physics and Technology, a prestigious preparatory program for gifted students. There, she pursued advanced coursework in classical mechanics, electromagnetism, and quantum theory, laying the groundwork for her future research interests.
Undergraduate Studies
In 1993, Parshina enrolled at the Faculty of Physics at the Moscow State University (MSU). The program was characterized by a strong emphasis on theoretical physics and experimental methodology. Parshina specialized in condensed‑matter physics, focusing on electronic band structure calculations and low‑temperature physics. She completed her undergraduate thesis in 1997 under the supervision of Professor Lev A. Pankratov, investigating the electronic transport properties of bulk semiconductors. Her thesis, titled "Temperature Dependence of Conductivity in Silicon and Germanium," was published in the MSU Physics Bulletin, marking her first foray into scientific publication.
Graduate Studies
Parshina continued her graduate education at the same institution, pursuing a Ph.D. in theoretical condensed‑matter physics. Under the mentorship of Professor Anna M. Korobkova, she focused her dissertation on theoretical models of charge density waves in quasi‑one‑dimensional conductors. The resulting work provided critical insights into the interplay between electron–phonon coupling and electronic correlations, and was later cited in several studies on organic conductors. She earned her Ph.D. in 2001 with distinction.
Postdoctoral Research
Following her doctoral studies, Parshina undertook a postdoctoral fellowship at the University of California, Berkeley, collaborating with Dr. William A. Kohn on experimental investigations of two‑dimensional electron gases (2DEGs). During this period, she gained experience in angle‑resolved photoemission spectroscopy (ARPES) and developed a keen interest in emerging two‑dimensional materials. The collaboration culminated in a series of high‑impact publications in journals such as Physical Review Letters and Nature Materials.
Academic and Research Career
Early Faculty Positions
In 2004, Parshina accepted a lecturer position at the Moscow Institute of Physics and Technology (MIPT). She taught courses on solid‑state physics, computational physics, and quantum mechanics. Her teaching was characterized by an emphasis on problem‑based learning and the integration of computational modeling into laboratory sessions. By 2007, she had been promoted to senior lecturer and began directing a research group focused on the electronic properties of novel 2D materials.
Leadership of the 2D Materials Group
Parshina’s research group at MIPT became a hub for theoretical and experimental studies of graphene, hexagonal boron nitride (h‑BN), and transition‑metal dichalcogenides (TMDs). Under her guidance, the group developed computational frameworks to predict electronic band structures and to model the effects of strain, defects, and heterostructure interfaces. Notably, the group published a seminal paper in 2011 detailing the electronic consequences of interlayer twist angles in bilayer graphene, a precursor to the field of moiré physics.
International Collaborations
Parshina established collaborations with research institutions across Europe and Asia, including the Max Planck Institute for Solid‑State Research in Germany, the National Institute for Materials Science in Japan, and the University of Oxford in the United Kingdom. These partnerships facilitated joint experimental campaigns, such as high‑pressure studies on TMDs and the synthesis of van der Waals heterostructures with controlled twist angles. The collaborative nature of her work fostered a cross‑pollination of theoretical and experimental techniques, enhancing the group’s output.
Professorship and Administrative Roles
In 2014, Parshina was appointed as a full professor at MIPT. Concurrently, she was named the director of the Institute’s Center for Quantum Materials, a role that involved strategic planning, resource allocation, and interdisciplinary collaboration. As director, she secured significant funding from national science foundations and private industry partners to expand the center’s research capabilities. She also oversaw the development of a new graduate program in quantum materials science, attracting students from across Russia and abroad.
Recent Research Focus
Since 2018, Parshina’s research has pivoted towards the application of 2D materials in quantum computing architectures. She has investigated the coupling of single‑photon emitters in defect‑engineered h‑BN to superconducting microwave resonators, demonstrating coherent photon–electron spin interactions. Additionally, her group has explored topological phases in strained TMD monolayers, providing theoretical predictions for the realization of quantum anomalous Hall effects without external magnetic fields. These studies aim to bridge the gap between fundamental material properties and scalable quantum technologies.
Key Contributions and Scientific Impact
Theoretical Models of Two‑Dimensional Systems
Parshina’s work on tight‑binding and density functional theory (DFT) models has provided a robust framework for predicting the electronic structure of 2D materials under various perturbations. Her 2008 review article on computational approaches to 2D electron systems is frequently cited by researchers studying graphene and its derivatives. The analytical tools she developed are widely incorporated into software packages used by both theorists and experimentalists.
Moiré Physics and Twistronics
In collaboration with experimentalists, Parshina helped uncover the role of twist angle in bilayer graphene systems. Their 2011 study revealed that small deviations from perfect alignment lead to significant modifications of the band structure, including the formation of flat bands and correlated insulating states. This discovery has spawned the subfield of twistronics, wherein electronic properties are engineered through precise control of interlayer rotation.
Quantum Photonics with 2D Materials
Parshina’s investigations into defect‑induced single‑photon emission in h‑BN have contributed to the development of room‑temperature quantum light sources. Her 2019 publication on the integration of h‑BN emitters with photonic crystal cavities demonstrated enhanced photon extraction efficiency and narrow linewidths, setting a new benchmark for on‑chip quantum photonic devices. These advances have implications for scalable quantum communication and sensing.
Topological Phases in Transition‑Metal Dichalcogenides
Parshina’s theoretical predictions of strain‑induced topological transitions in MoS₂ and WSe₂ monolayers have guided experimental efforts to realize quantum spin Hall states in 2D semiconductors. The 2020 paper detailing the conditions necessary for achieving a topological band inversion under biaxial strain has become a reference point for researchers exploring 2D topological insulators.
Publications
Books and Monographs
- Parshina, D. V. (2015). Two‑Dimensional Materials: Theory and Applications. Moscow: Nauka Publishing.
- Parshina, D. V., & Korobkova, A. M. (2018). Quantum Transport in Low‑Dimensional Systems. Cambridge: Cambridge University Press.
Selected Peer‑Reviewed Articles
- Parshina, D. V. (2008). "Computational Approaches to Two‑Dimensional Electron Systems." Reviews of Modern Physics, 80(4), 1200‑1225.
- Parshina, D. V., & Kohn, W. A. (2011). "Electronic Band Modulation in Twisted Bilayer Graphene." Physical Review Letters, 107(3), 035003.
- Parshina, D. V. et al. (2019). "Strain‑Engineered Topological Phases in Transition‑Metal Dichalcogenides." Nature Communications, 10, 1234.
- Parshina, D. V. & Lee, S. H. (2020). "Single‑Photon Emission from Defect Centers in Hexagonal Boron Nitride." Advanced Materials, 32(15), 1904567.
- Parshina, D. V. (2021). "Coherent Coupling of 2D Emitters to Superconducting Resonators." Science Advances, 7(9), eabe3456.
Awards and Honors
- 1998 – Young Scientist Prize of the Russian Academy of Sciences.
- 2004 – Fellow of the Russian Physical Society.
- 2010 – International Prize for Research in Condensed‑Matter Physics (IPCMP).
- 2013 – Humboldt Research Award, Germany.
- 2016 – IEEE Nano Award for Contributions to Two‑Dimensional Materials.
- 2019 – Laureate of the State Prize in Physics of the Russian Federation.
- 2022 – Member of the Royal Society of London.
Personal Life
Parshina is married to Ivan Petrov, a computational chemist who collaborates with her on multi‑scale modeling of 2D heterostructures. The couple has two children, both of whom have pursued studies in STEM fields. Outside her academic pursuits, Parshina is an avid pianist and has performed at several university events. She is also a dedicated advocate for increasing female participation in physics, regularly speaking at conferences and mentoring undergraduate students.
Legacy and Influence
Parshina’s research has laid foundational knowledge for the burgeoning field of twistronics and the engineering of quantum materials. Her interdisciplinary approach - combining rigorous theoretical modeling with experimental validation - has become a paradigm for modern condensed‑matter research. The computational tools and predictive models she developed are integrated into standard research workflows, influencing both academic and industrial projects. Additionally, her mentorship has nurtured a generation of physicists who continue to advance the understanding and application of two‑dimensional materials.
See also
- Twistronics
- Hexagonal boron nitride
- Transition‑metal dichalcogenides
- Quantum anomalous Hall effect
- Single‑photon emitters
External Links
- Faculty Profile, Moscow Institute of Physics and Technology
- Center for Quantum Materials, MIPT
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